Excimer laser annealing of ion‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333204
Reference11 articles.
1. A comparative study of laser and thermal annealing of boron‐implanted silicon
2. Melting phenomenon and properties of defects associated with pulsed laser irradiation†
3. Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon
4. p‐njunction formation in boron‐deposited silicon by laser‐induced diffusion
5. Laser‐induced reactions of platinum and other metal films with silicon
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