Electrical transport properties of ferromagnetic GaxCr1−xN thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2357603
Reference22 articles.
1. Spintronics: A Spin-Based Electronics Vision for the Future
2. Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films
3. Observation of ferromagnetism above 900K in Cr–GaN and Cr–AlN
4. The role of Cr substitution on the ferromagnetic properties of Ga1−xCrxN
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1. Half-metallic p-electron ferromagnetism in alkaline earth doped AlAs: A first-principles calculation;Applied Physics Letters;2012-02-27
2. Electric Conduction in a Single GaN Nanocolumn;e-Journal of Surface Science and Nanotechnology;2012
3. Embedded clusters and magnetism in Cr-doped AlAs: A first-principles study;Applied Physics Letters;2010-12-27
4. Nitrogen vacancy and ferromagnetism in Cr-doped GaN: First-principles calculations;Journal of Solid State Chemistry;2010-11
5. Structural stability and half-metallicity of the zinc-blende phase ofAl1−xCrxAs: Density-functional study;Physical Review B;2009-12-17
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