Effects of a thin (In)GaAs layer on the structural and optical properties of InAs∕InAlGaAs quantum dots-Reference-Cited by-同舟云学术

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Effects of a thin (In)GaAs layer on the structural and optical properties of InAs∕InAlGaAs quantum dots

Published:2007-12 Issue:11 Volume:102 Page:113526
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Jin Soo,Yang Youngsin,Lee Cheul-Ro,Lee In Hwan,Yu Yeon Tae,Ahn Haeng Keun,Seol Kyeong Won,Kim Jong Su,Leem Jae-Young,Ryu Mee-Yi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2822470

Reference16 articles.

1. Coupling and Entangling of Quantum States in Quantum Dot Molecules

2. Spontaneous localization in InAs/GaAs self-assembled quantum-dot molecules

3. Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region

4. High detectivity InAs quantum dot infrared photodetectors

5. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced multiferroicity in Mn- and Cu-modified 0.7BiFeO3 − 0.3(Ba0.85Ca0.15)TiO3 ceramics;Journal of Applied Physics;2020-02-14

2. Lasing Characteristics of InP-Based InAs Quantum Dots Depending on InGaAsP Waveguide Conditions;Journal of Nanoscience and Nanotechnology;2014-12-01

3. High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer;Laser Physics Letters;2014-09-29

4. Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots;Journal of the Korean Physical Society;2013-05

5. Effects of a thin InGaAs layer on carrier dynamics of InAs quantum dots;Journal of Applied Physics;2010-11

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