Thermal stability of Ti∕Pt∕Cu Schottky contact on InAlAs layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2338567
Reference16 articles.
1. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
2. Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporation of cerium oxide into the Ta barrier
3. Barrier Properties of Very Thin Ta and TaN Layers Against Copper Diffusion
4. Microstructure and electromigration in copper damascene lines
5. Phase formation in Cu‐Si and Cu‐Ge
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1. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts;Surfaces and Interfaces;2023-07
2. GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications;Current Applied Physics;2017-07
3. Features of current flow in structures based on Au/Ti/n-InAlAs Schottky barriers;Technical Physics Letters;2017-06
4. Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate;Applied Physics Express;2012-05-25
5. Copper-plated 50 nm T-gate fabrication;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11
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