Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4770367
Reference18 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures
3. High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm
4. High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates
5. Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
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1. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN;Optics Express;2019-07-25
2. Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes;Optics Express;2018-05-01
3. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy;Applied Physics Letters;2016-07-25
4. Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN;Semiconductor Science and Technology;2016-01-18
5. MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN;physica status solidi (b);2015-09-21
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