Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

Published:2018-11-05 Issue:19 Volume:113 Page:191601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ponchet A.¹^ORCID,Patriarche G.²,Rodriguez J. B.³^ORCID,Cerutti L.³,Tournié E.³^ORCID

Affiliation:

1. CEMES-CNRS, Université de Toulouse, UPS, 31055 Toulouse, Cedex 04, France

2. Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris Sud, Université Paris Saclay, Avenue de la Vauve, 91120 Palaiseau, France

3. IES, University Montpellier, CNRS, 34095 Montpellier, Cedex 5, France

Funder

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5055056

Reference22 articles.

1. Metamorphic III–V semiconductor lasers grown on silicon

2. Vertical III–V Nanowire Device Integration on Si(100)

3. Universal description of III-V/Si epitaxial growth processes

4. Initial growth stage of GaSb on Si(001) substrates with AlSb initiation layers

5. Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001) substrate by molecular beam epitaxy method

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy;Advanced Physics Research;2024-08-22

2. Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition;ACS Applied Electronic Materials;2024-06-21

3. Inevitable Si surface passivation prior to III-V/Si epitaxy: Strong impact on wetting properties;Physical Review B;2024-01-16

4. On the multifaceted journey for the invention of epitaxial quantum dots;Progress in Crystal Growth and Characterization of Materials;2023-12

5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique;East European Journal of Physics;2023-09-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3