Electronic parameters of the two-dimensional electron gas in modulation-doped single quantum wells due to an embedded deep step layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1344222
Reference18 articles.
1. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells
2. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence
3. Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures
4. Temperature dependence of photoluminescence linewidth in modulation‐doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures
5. Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1−xAs quantum wells
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs inserts;Semiconductors;2015-02
2. Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures;Physics Procedia;2015
3. Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1−xAs/GaAs modulation-doped heterostructures;Applied Surface Science;2006-04
4. Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1−xAs/InyGa1−yAs/AlxGa1−xAs step quantum wells;Materials Science and Engineering: B;2004-03
5. Strain effect and carrier density in modulation-doped AlxGa1 -xAs/InyGa1 -yAs/GaAs step quantum wells with an embedded potential barrier;Journal of Materials Science Letters;2003-12
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