The influence of growth conditions on the growth rate and composition of GaAs and GaInAs alloys grown by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345401
Reference9 articles.
1. Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
2. The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls
3. Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy
4. Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy
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