Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green (λ≲5560 Å, ℏ ω≳2.23 eV)-Reference-Cited by-同舟云学术

Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green (λ≲5560 Å, ℏ ω≳2.23 eV)

Published:1972-12 Issue:12 Volume:43 Page:5134-5140
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Duke C. B.,Smith D. L.,Kleiman G. G.,Macksey H. M.,Holonyak N.,Dupuis R. D.,Campbell J. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1661085

Reference18 articles.

1. Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps inGaAs1−xPx

2. Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inIn1−xGaxP

3. Toward a Theory of Isoelectronic Impurities in Semiconductors

4. Theory of Luminescent Efficiency of Ternary Semiconductors

5. Wave Functions for Impurity Levels

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1. Photoluminescence properties of N‐implanted Al0.30Ga0.70As0.62P0.38alloy grown on GaAs0.61P0.39substrates;Journal of Applied Physics;1993-07

2. Photoluminescence study of rapid thermal annealing from nitrogen‐implanted In0.32Ga0.68P;Journal of Applied Physics;1992-09

3. Luminescence decays of N-bound excitons inGsAs1−xPx;Physical Review B;1983-02-15

4. Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic study;Physical Review B;1980-04-15

5. Nitrogen states in Ga(As,P) and the intermediate-range model;Physical Review B;1979-03-15