Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors
Author:
Affiliation:
1. Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701, Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4995973
Reference15 articles.
1. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
4. Present status of amorphous In–Ga–Zn–O thin-film transistors
5. High mobility indium free amorphous oxide thin film transistors
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