Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material-Reference-Cited by-同舟云学术

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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Published:2001-09-24 Issue:13 Volume:79 Page:2016-2018
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Linnarsson M. K.,Janson M. S.,Zimmermann U.,Svensson B. G.,Persson P. O. Å.,Hultman L.,Wong-Leung J.,Karlsson S.,Schöner A.,Bleichner H.,Olsson E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1402160

Reference7 articles.

1. Site‐competition epitaxy for superior silicon carbide electronics

2. Phase equilibria in the Al-Si-C system

3. Stable and metastable phase equilibria in the chemical interaction between aluminium and silicon carbide

4. Mechanism and kinetics of the chemical interaction between liquid aluminium and silicon-carbide single crystals

5. Thermodynamic calculation of the ternary system Al-Si-C

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1. Analysis of the electrical activation data in thermally annealed implanted Al/4H–SiC systems: A novel approach based on cooperativity;Materials Science in Semiconductor Processing;2022-09

2. Compensation of p-type doping in Al-doped 4H-SiC;Journal of Applied Physics;2022-05-14

3. Negative Hall Factor of Acceptor Impurity Hopping Conduction in p-Type 4H-SiC;Journal of Electronic Materials;2021-01-04

4. Effects of M2O3–Y2O3 (M = Sc and Al) additives on electrical conductivity of hot-pressed SiC ceramics;Ceramics International;2020-03

5. Doping of SiC Crystals during Sublimation Growth and Diffusion;Crystal Growth;2019-11-06

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