Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain-Reference-Cited by-同舟云学术

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Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain

Published:2017-06-19 Issue:25 Volume:110 Page:252103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jo Insun¹,Mueed M. A.¹,Pfeiffer L. N.¹,West K. W.¹,Baldwin K. W.¹,Winkler R.²,Padmanabhan Medini³,Shayegan M.¹

Affiliation:

1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 USA

2. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115 USA

3. Physical Sciences Department, Rhode Island College, Providence, Rhode Island 02908 USA

Funder

National Science Foundation (NSF)

Division of Electrical, Communications and Cyber Systems (ECCS)

U.S. Department of Energy (DOE)

Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4984954

Reference44 articles.

1. Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System

2. Intrinsic Spin Hall Effect in the Two-Dimensional Hole Gas

3. Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures

4. Transverse magnetic focusing and the dispersion of GaAs 2D holes at (311)A heterojunctions

5. Tunable Spin-Splitting and Spin-Resolved Ballistic Transport in GaAs/AlGaAs Two-Dimensional Holes

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