Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370961
Reference5 articles.
1. Study of surface Fermi level and surface state distribution in InAlAs surface‐intrinsic‐n+ structure by photoreflectance
2. Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces
3. New normalization procedure for modulation spectroscopy
4. Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation
5. Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C
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