Quantitative strain analysis in AlGaAs-based devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1579567
Reference17 articles.
1. Experimental validation of mechanical stress models by micro-Raman spectroscopy
2. Local stress measurements in laterally oxidized GaAs/AlxGa1−xAs heterostructures by micro-Raman spectroscopy
3. Mechanical stress measurements using micro-Raman spectroscopy
4. Micro-Raman spectroscopy of the solid state: applications to semiconductors and thin films
5. Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes
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4. TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures by uniaxial compression;Semiconductor Science and Technology;2016-02-01
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