Dynamics of metal-induced crystallization of ultrathin Ge films by rapid thermal annealing
Author:
Affiliation:
1. School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney 2052, Australia
Funder
NSW Government Science Leverage Fund
Australian Renewable Energy Agency (ARENA)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4937270
Reference41 articles.
1. A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
2. M. Zschintzsch-Dias , “ Self organized formation of Ge nanocrystals in multilayers,” Doctor thesis ( Technischen Universität Dresden, 2012).
3. Growth and characterization of Ge nanocrystals in ultrathin SiO2 films
4. Ge epitaxial island growth on a graphitized C-rich 4H-SiC(0001) surface
5. Epitaxial Silicon Dots Self-Assembled on Aluminum Nitride/Si (111)
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1. Temperature environmental adaptability on electrical and stress properties of Ge film in space;Journal of Materials Research and Technology;2021-11
2. Crystal Structure, Stability, and Physical Properties of Metastable Electron-Poor Narrow-Gap AlGe Semiconductor;Inorganic Chemistry;2017-09-11
3. Resonant Tunneling through Monolayer Si Colloidal Quantum Dots and Ge Nanocrystals;Advanced Functional Materials;2017-03-31
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