Investigation of Near Field Intensity in GAN MQW in 300–375 Nanometer Wavelength Ranges-Reference-Cited by-同舟云学术

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Investigation of Near Field Intensity in GAN MQW in 300–375 Nanometer Wavelength Ranges

Published:2008-01 Issue:8-9 Volume:22 Page:1122-1130
ISSN:0920-5071
Container-title:Journal of Electromagnetic Waves and Applications
language:en
Short-container-title:Journal of Electromagnetic Waves and Applications

Author:

Talele K.¹,Samuel E. P.²,Patil D. S.³

Affiliation:

1. a Department of Electronics, North Maharashtra University, Jalgaon, Maharashtra, India

2. b Department of Electronics, North Maharashtra University, Jalgaon, Maharashtra, India

3. c Department of Electronics, North Maharashtra University, Jalgaon, Maharashtra, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1163/156939308784158823

Reference28 articles.

1. Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

2. Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates

3. Amplification of Acoustic-electromagnetic Waves in GaN Films

4. Ultraviolet electroabsorption modulator based on AlGaN∕GaN multiple quantum wells

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1. Numerical simulations of an all-optical parity generator and checker utilizing a reflective semiconductor optical amplifier at 200 Gbps;Journal of Computational Electronics;2020-01-20

2. FDTD method for the scattered-field equation to calculate the radar cross-section of a three-dimensional target;Journal of Computational Electronics;2018-04-10

3. Self-consistent analysis of electron transport in GaN/AlGaN super lattice nanostructure for light emission;Optik;2016-09

4. Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells;SPIE Proceedings;2012-02-09

5. Dependence of Efficiency-Droop Effect on the Location of High Indium Layer in Staggered InGaN Quantum Wells;Journal of Electromagnetic Waves and Applications;2011-01

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