Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-7-492.pdf
Reference43 articles.
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3. Hsiao CL, Liu TW, Wu CT, Hsu HC, Hsu GM, Chen LC, Shiao WY, Yang CC, Gällström A, Holtz P-O, Chen CC, Chen KH: High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment. Appl Phys Lett 2008, 92: 111914. 10.1063/1.2898214
4. Novikov SV, Stanton NM, Campion RP, Morris RD, Green HL, Foxon CT, Kent AJ: Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates. Semicond Sci Technol 2008, 23: 015018. 10.1088/0268-1242/23/1/015018
5. Andreev AD, O’Reilly EP: Theory of the electronic structure of GaN/AlN hexagonal quantum dots. Phys Rev B 2000, 62: 15851. 10.1103/PhysRevB.62.15851
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