Theoretical and experimental studies of (In,Ga)As/GaP quantum dots-Reference-Cited by-同舟云学术

Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

Published:2012-11-23 Issue:1 Volume:7 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Robert Cedric,Thanh Tra Nguyen,Cornet Charles,Turban Pascal,Perrin Mathieu,Balocchi Andrea,Folliot Herve,Bertru Nicolas,Pedesseau Laurent,Nestoklon Mikhail O,Even Jacky,Jancu Jean-Marc,Tricot Sylvain,Durand Olivier,Marie Xavier,Le Corre Alain

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-7-643.pdf

Reference20 articles.

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4. Volz K, Beyer A, Witte W, Ohlmann J, Németh I, Kunert B, Stolz W: GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration. J Cryst Growth 2011, 315: 37–47. 10.1016/j.jcrysgro.2010.10.036

5. Létoublon A, Guo W, Cornet C, Boulle A, Véron M, Bondi A, Durand O, Rohel T, Dehaese O, Chevalier N, Bertru N, Le Corre A: X-ray study of antiphase domains and their stability in MBE grown GaP on Si. J Cryst Growth 2011, 323: 409–412. 10.1016/j.jcrysgro.2010.10.137

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