Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-7-686.pdf
Reference27 articles.
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3. Haffouz S, Tang H, Rolfe S, Bardwell JA: Growth of crack-free, carbon-doped GaN and AlGaN/GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy. Appl Phys Lett 2006, 88: 252114. 10.1063/1.2215600
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