Direct Magnetic Relief Recording Using As40S60: Mn–Se Nanocomposite Multilayer Structures-Reference-Cited by-同舟云学术

Direct Magnetic Relief Recording Using As40S60: Mn–Se Nanocomposite Multilayer Structures

Published:2017-04-20 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Stronski A.,Achimova E.,Paiuk O.,Meshalkin A.,Prisacar A.,Triduh G.,Oleksenko P.,Lytvyn P.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2060-6.pdf

Reference34 articles.

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3. Špotûk OI, Filipecki J (2003) Free volume in vitreous chalcogenide semiconductors: possibilities of positron annihilation lifetime study. Wydaw. Wyższej Szkoły Pedagogicznej, Częstochowa

4. Stronski AV, Vlček M (2002) Photosensitive properties of chalcogenide vitreous semiconductors in diffractive and holographic technologies applications. J Optoelectron Adv Mater 4:699–704

5. Sanghera JS, Aggarwal ID, Shaw LB et al (2001) Applications of chalcogenide glass optical fibers at NRL. J Optoelectron Adv Mater 3:627–640

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