Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives

Author:

Lv Fengzhen,Ling Kang,Zhong Tingting,Liu Fuchi,Liang Xiaoguang,Zhu Changming,Liu Jun,Kong Wenjie

Abstract

AbstractHigh-quality CH3NH3PbI 3−xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Wang Y, Liu Q, Long SB, Wang W, Wang Q, Zhang MH, Zhang S, Li YT, Y ZQ, Yang JH, Liu M (2010) Investigation of resistive switching in Cu-doped HfO 2 thin film for multilevel non-volatile memory applications. Nanotechnology 21:045202.

2. Lee JS, Kim YM, Kwon JH, Sim JS, Shin HJ, Sohn BH, Jia QX (2011) Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons. Adv Mater 26:2064–2068.

3. Waser R, Aono M (2007) Nanoionics-based resistive switching memories. Nat Mater 6:833–843.

4. Ismail M, Talib I, Rana AM, Akbar T, Jabeen S, Lee JJ, Kim SJ (2018) Effect of bilayer CeO 2−x/ZnO and ZnO/CeO 2−x heterostructures and electroforming polarity on switching properties of non-volatile memory. Nanoscale Res Lett 13(318):1–10.

5. Zahoor F, Zulkifli TZA, Khanday FA (2020) Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications. Nanoscale Res Lett 15(90):1–26.

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