Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-016-1642-z.pdf
Reference53 articles.
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4. Ganjipour B, Wallentin J, Borgstrom MT, Samuelson L, Thelander C (2012) Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires. ACS Nano 6:3109–3113
5. Martin PN, Aksamija Z, Pop E, Ravaioli U (2010) Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires. Nano Lett 10:1120–1124
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