Author:
Huang Qin,Pan Song,Zhang Mu,Wang Zulin
Abstract
Abstract
Recently, low-density parity-check (LDPC) codes have been applied in flash memories to correct errors. However, as verified in this article, their performance degrades rapidly as the number of stuck cells increases. Thus, this paper presents a concatenation reliability scheme of LDPC codes and source codes, which aims to improve the performance of LDPC codes for flash memories with stuck cells. In this scheme, the locations of stuck cells is recorded by source codes in the write process such that erasures rather than wrong log-likelihood ratios on these cells are given in the read process. Then, LDPC codes correct these erasures and soft errors caused by cell-to-cell interferences. The analyses of channel capacity and compression rates of source codes with side information show that the memory cost of the proposed scheme is moderately low. Simulation results verify that the proposed scheme outperforms the traditional scheme with only LDPC codes.
Publisher
Springer Science and Business Media LLC
Reference16 articles.
1. Pavan P, Bez R, Olivo P, Zanoni E: Flash memory cells—an overview. Proc. IEEE 1997, 85: 1248-1271. 10.1109/5.622505
2. NAND Flash Design and Use Considerations Introduction, Micron TN-29-17 [http://download.micron.com/pdf/technotes/nand/tn2917.pdf]
3. Wang J, Dong G, Zhang T, Wesel R: Mutual-information optimized quantization for LDPC decoding of accurately modeled flash data. 2012. arXiv:1202.1325v1 [cs.IT]
4. Dong G, Xie N, Zhang T: On the use of soft-decision error-correction codes in NAND Flash memory. IEEE Trans. Circuits Syst. I 2010, 58(2):429-439.
5. Gallager R: Low density parity check codes. IRE Trans. Inf. Theory 1962, 8: 21-28. 10.1109/TIT.1962.1057683
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