Neutron Bragg Diffraction on a Bent Silicon Single Crystal Excited by Ultrasound

Abstract

Neutron Bragg Diffraction on a Bent Silicon Single Crystal Excited by UltrasoundThe neutron Bragg diffraction on a bent silicon monocrystal excited by ultrasound was investigated. It is shown that for perfect crystal the relative diffraction intensity is proportional to the acoustic wave amplitudew.The calibration parameters between the generator voltage and acoustic wave amplitude were derived assumingw= (2.3±0.3)·10-2Å/V. To explain the results, a modified Penning—Polder—Kato model was applied. In a bent crystal, owing to ultrasound, transitions between the sheets of a dispersion surface take place. This leads to various manifestations of the behaviour of the integral scattering intensity, which drastically differs from the case of a perfect crystal. The observed effects may be used for creating new types of neutron monochromators and choppers governed by the ultrasound wave amplitude as well as by the length and bending radius of the crystal.