On a current mechanism in Ta2O5 thin films

Abstract

AbstractElectrical conduction in the temperature range of 120–370 K has been studied in sandwiched structures of Al/Ta2O5/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600°C. The temperature-dependent current-voltage (I–V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I–V data measured on Ta2O5 films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.