Influence of anomalous dispersion mirror properties on quantum efficiency of InGaAs/GaAs resonant cavity photodetector-Reference-Cited by-同舟云学术

Influence of anomalous dispersion mirror properties on quantum efficiency of InGaAs/GaAs resonant cavity photodetector

Published:2011-01-01 Issue:3 Volume:19 Page:
ISSN:1896-3757
Container-title:Opto-Electronics Review
language:
Short-container-title:

Author:

Gryshchenko S.,Demin A.,Sukhoivanov I.,Lysak V.

Abstract

AbstractWe present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs p-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror, flat-topped QE spectrum has been obtained. Conditions for ideal flat-topped spectral response have been received. A design with a maximum QE of 93.5% and 3-nm bandwidth at 0.02 dB below the peak is presented.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

Link

http://link.springer.com/content/pdf/10.2478/s11772-011-0024-4

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