Abstract
AbstractNarrow spectral band infrared detectors are required for multispectral infrared imaging. Wavelength selectivity can be obtained by placing passive line filters in front of the detectors, or, the preferred choice, by making the detectors themselves wavelength selective. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Brugg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
Reference13 articles.
1. A. Rogalski, K. Adamiec, and J. Rutkowski, Narrow-Gap Semiconductor Photodiodes, SPIE Press, Bellingham, 2000.
2. Infrared Detectors and Emitters: Material and Devices, edited by P. Capper, C.T. Elliott, Kluwer Academics Publ., Boston/Dordrecht/London, 2000.
3. H. Zogg, K. Alchalabi, D. Zimin, and K. Kellermann, “Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms”, IEEE Trans. Electron Devices 50, 209–214 (2003).
4. J. Carrano, J. Brown, P. Percont, and K. Barnard, “Tuning in to detection”, SPIE OE magazine, 20–22 (2004).
5. W. Heiss, M. Böberl, T. Schwarzl, G. Springholz, J. Fürst and H. Pascher, “Applications of lead-salt microcavities for mid-infrared devices,” IEE Proc. Optoelectron. 150, 332–336 (2003).
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献