Variation in the built-in potential of a photodiode based on an n-InSe-p-GaSe heterojunction in the course of aging-Reference-Cited by-同舟云学术

Variation in the built-in potential of a photodiode based on an n-InSe-p-GaSe heterojunction in the course of aging

Published:2004-05 Issue:5 Volume:38 Page:546-549
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Drapak S. I.,Orletskii V. B.,Kovalyuk Z. D.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1755889.pdf

Reference19 articles.

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3. T. V. Aver’yanova, V. L. Bakumenko, L. N. Kurbatov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 14, 1573 (1980) [Sov. Phys. Semicond. 14, 932 (1980)].

4. V. N. Katerinchuk, Z. D. Kovalyuk, V. A. Manasson, and K. D. Tovstyuk, Fiz. Tekh. Poluprovodn. (Leningrad) 21, 380 (1987).

5. É. G. Ashirov, V. L. Bakumenko, A. K. Bonakov, et al., in Abstracts of the All-Union Workshop on Radiation Effects in Semiconductors and Semiconductor Devices (Azernesher, Baku, 1980), p. 91.

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