Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies

Author:

Murzakhanov F. F.ORCID,Sadovnikova M. A.ORCID,Mamin G. V.ORCID,Shurtakova D. V.ORCID,Mokhov E. N.ORCID,Kazarova O. P.ORCID,Gafurov M. R.ORCID

Abstract

High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin $$I = 0$$) 6H-28SiC crystal have been studied using the photoinduced ($$\lambda $$ = 980 nm) high-frequency (94 GHz, 3.4 T) pulsed electron paramagnetic resonance method at a temperature of $$T = 150{\kern 1pt} $$ K. Three structurally nonequivalent types of NV centers with axial symmetry have been identified and their spectroscopic parameters have been determined. Long spin–lattice, $${{T}_{1}} = 1.3{\kern 1pt} $$ ms, and spin–spin, $${{T}_{2}} = 59{\kern 1pt} $$ μs, ensemble relaxation times of NV centers with extremely narrow (450 kHz) absorption lines allow highly selective excitation of resonant transitions between sublevels $$({{m}_{I}})$$ caused by the weak hyperfine interaction $$(A \approx 1{\kern 1pt} $$ MHz) with 14N $$(I = 1)$$ nuclei for the quantum manipulation of the electron spin magnetization.

Publisher

Pleiades Publishing Ltd

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