Author:
Aseyev S. A.,Mironov B. N.,Kochikov I. V.,Lotin A. A.,Ischenko A. A.,Ryabov E. A.
Abstract
The behavior of a thin-film GeTe crystal induced by intense femtosecond laser pulses ($$\lambda = 0.8{\kern 1pt} $$ μm) has been studied using a pulsed electron diffractometer. The sample is an annealed 20-nm GeTe film on a copper grid with a carbon coating. It has been found that laser ablation results in the formation of an ultrathin GeTe crystal (assumingly, GeTe monolayer) with a high radiation resistance. Possible reasons for the detected nanosize effect are discussed.
Subject
Physics and Astronomy (miscellaneous)