Interactions of μAl acceptor impurity in weakly and heavily doped silicon-Reference-Cited by-同舟云学术

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Interactions of μAl acceptor impurity in weakly and heavily doped silicon

Published:2002-10 Issue:7 Volume:76 Page:440-443
ISSN:0021-3640
Container-title:Journal of Experimental and Theoretical Physics Letters
language:en
Short-container-title:Jetp Lett.

Author:

Mamedov T. N.,Andrianov D. G.,Herlach D.,Gorelkin V. N.,Stoikov A. V.,Zimmermann U.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1528698.pdf

Reference17 articles.

1. S. Ya. Kilin, Usp. Fiz. Nauk 169, 507 (1999).

2. G. D. Watkins, Fiz. Tverd. Tela (St. Petersburg) 41, 826 (1999) [Phys. Solid State 41, 746 (1999)].

3. V. N. Gorelkin, V. G. Grebinnik, K. I. Gritsai, et al., Pis’ma Zh. Éksp. Teor. Fiz. 63, 539 (1996) [JETP Lett. 63, 566 (1996)].

4. T. N. Mamedov, I. L. Chaplygin, V. N. Duginov, et al., J. Phys.: Condens. Matter 11, 2849 (1999).

5. T. N. Mamedov, D. G. Andrianov, D. Herlach, et al., Zh. Éksp. Teor. Fiz. 119, 1159 (2001) [JETP 92, 1004 (2001)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Shallow acceptor impurities in diamond-like semiconductors studied by polarized negative muons;Physica B: Condensed Matter;2009-04

2. Ionization mechanisms of aluminum acceptor impurity in silicon;Journal of Experimental and Theoretical Physics Letters;2004-01

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