Current transport in the Me-n-n + Schottky-barrier structures-Reference-Cited by-同舟云学术

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Current transport in the Me-n-n + Schottky-barrier structures

Published:2000-01 Issue:1 Volume:34 Page:108-114
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Torkhov N. A.,Eremeev S. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187953.pdf

Reference18 articles.

1. F. A. Radovani and R. Stratton, Solid-State Electron. 9, 695 (1966).

2. K. Shenai and R. W. Dutton, IEEE Trans. Electron Devices 35(4), 468 (1988).

3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).

4. M. I. Veksler, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30(9), 1718 (1996).

5. V. N. Dobrovolskii, G. K. Nitsidze, and V. N. Petrusenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 28(4), 651 (1994).

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