Preparation and properties of isotopically pure polycrystalline silicon-Reference-Cited by-同舟云学术

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Preparation and properties of isotopically pure polycrystalline silicon

Published:2001-08 Issue:8 Volume:35 Page:877-879
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Godisov O. N.,Kaliteevskii A. K.,Korolev V. I.,Ber B. Ya.,Davydov V. Yu.,Kaliteevskii M. A.,Kop’ev P. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1393019.pdf

Reference23 articles.

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2. M. Asen-Palmer, K. Bartkowski, E. Gmelin, et al., Phys. Rev. B 56(15), 9431 (1997).

3. T. R. Anthony, W. F. Banholzer, J. F. Fleisher, et al., Phys. Rev. B 42(2), 1104 (1990).

4. L. H. Wei, P. K. Kuo, R. L. Thomas, et al., Phys. Rev. Lett. 70(24), 3764 (1993).

5. W. S. Capinski, H. J. Maris, E. Bauser, et al., Appl. Phys. Lett. 71(15), 2109 (1997).

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