Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects-Reference-Cited by-同舟云学术

Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects

Published:2017-11 Issue:11 Volume:51 Page:1435-1438
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zabavichev I. Yu.,Obolenskaya E. S.,Potekhin A. A.,Puzanov A. S.,Obolensky S. V.,Kozlov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782617110288/fulltext.html

Reference9 articles.

1. S. V. Vavilov, Radiation Effects in Semiconductors (Fizmatgiz, Moscow, 1963) [in Russian].

2. S. V. Obolenskii, Izv. Vyssh. Uchebn. Zaved., Elektron., No. 4, 49 (2003).

3. S. V. Obolenskii, Russ. Microelectron. 33, 120 (2004).

4. http://www.srim.org/.

5. Yu. K. Pozela, Physics of High-Speed Transistors (Vil’nyus, Mokslas, 1989; Springer, New York, 1993).

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