Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface-Reference-Cited by-同舟云学术

Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface

Published:2009-03 Issue:3 Volume:43 Page:368-373
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Akopyan A. A.,Bachronov Kh. N.,Borkovskaya O. Yu.,Dmitruk N. L.,Yodgorova D. M.,Karimov A. V.,Konakova R. V.,Mamontova I. B.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609030208.pdf

Reference3 articles.

1. I. N. Arsent’ev, A. V. Bobyl’, O. Yu. Borkovskaya, D. A. Vinokurov, N. L. Dmitruk, A. V. Karimov, V. P. Klad’ko, R. V. Konakova, S. G. Konnikov, and I. B. Mamontova, Fiz. Tekh. Poluprovodn. 40(7), 876 (2006) [Semiconductors 40, 854 (2006)].

2. A. A. Akopyan, O. Yu. Borkovskaya, N. L. Dmitruk, A. V. Karimov, R. V. Konakova, V. V. Milenin, A. V. Sachenko, M. N. Tursunov, and D. M. Yodgorova, Photoconverters with AlGaAs GaAs Heterojunction on Textured GaAs Substrates (FAN, Tashkent, 2004) [in Russian].

3. A. V. Karimov and D. M. Yodgorova, Physical Phenomena in Gallium Arsenide Structures with Microlayer Quasiperiodic Junction (FAN, Tashkent, 2005) [in Russian].

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