Features of defect formation during the growth of double heterostructures for injection lasers based on Al x Ga1 − x As y Sb1 − y /GaSb materials-Reference-Cited by-同舟云学术

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Features of defect formation during the growth of double heterostructures for injection lasers based on Al x Ga1 − x As y Sb1 − y /GaSb materials

Published:2013-08 Issue:8 Volume:47 Page:1110-1115
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kuznetsov G. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782613080125.pdf

Reference11 articles.

1. G. A. Rozgonyi, P. M. Petroff, and M. B. Panish, J. Cryst. Growth 27, 106 (1974).

2. M. G. Mil’vidskii and V. B. Osvenskii, Sov. Phys. Crystallogr. 22, 246 (1977).

3. Zh. I. Alferov, D. Z. Garbuzov, L. M. Dolginov, P. G. Eliseev, and M. G. Mil’vidskii, Vestn. Akad. Nauk SSSR, No. 4, 31 (1978).

4. Yu. A. Tkhorik and L. S. Khazan, Plastic Deformation and Misfit Dislocations in Heteroepitaxial Systems (Nauk. Dumka, Kiev, 1983), p. 304 [in Russian].

5. M. G. Mil’vidskii and V. B. Osvenskii, Structure Defects in the Monocrystals of Semiconductors (Metallurgiya, Moscow, 1984), p. 205 [in Russian].

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