Out-diffusion of impurity via the kick-out mechanism during gettering-Reference-Cited by-同舟云学术

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Out-diffusion of impurity via the kick-out mechanism during gettering

Published:2007-09 Issue:9 Volume:41 Page:1048-1055
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov O. V.,Krivoruchko A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607090084.pdf

Reference20 articles.

1. V. A. Perevoshchikov and V. D. Skupov, Gettering of Impurities and Defects in Semiconductors (Nizhegor. Gos. Univ., Nizhni Novgorod, 2002) [in Russian].

2. A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A 70, 489 (2000).

3. J. S. Kang and D. K. Schroder, J. Appl. Phys. 65, 2974 (1989).

4. G. Z. Nemtsev, A. I. Pekarev, Yu. D. Chistyakov, and A. N. Burmistrov, Zarubezh. Élektron. Tekh., No. 11 (245), 3 (1981).

5. U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23, 361 (1980).

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