Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films-Reference-Cited by-同舟云学术

Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

Published:2016-01 Issue:1 Volume:50 Page:59-65
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zaynabidinov S. Z.,Saidov A. S.,Leiderman A. Yu.,Kalanov M. U.,Usmonov Sh. N.,Rustamova V. M.,Boboev A. Y.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782616010231/fulltext.html

Reference16 articles.

1. Zh. I. Alferov, Rev. Mod. Phys. 73, 767 (2001).

2. S. L. Sheng, Semiconductor Physical Electronics (Springer, Berlin, 2006).

3. A. S. Saidov, A. Sh. Razzakov, V. A. Risaeva, and E. A. Koschanov, Mater. Chem. Phys. 68, 1 (2001).

4. V. M. Andreev, L. M. Dolginov, and D. N. Tret’yakov, Liquid Epitaxy in Technology of Semiconductor Devices (Sov. Radio, Moscow, 1975) [in Russian].

5. A. S. Saidov, M. S. Saidov, and E. A. Koshchanov, Liquid Epitaxy of Compensated Layers of Gallium Arsenide and Solid Solutions Based on it (Fan, Tashkent, 1986) [in Russian].

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-12

2. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure;Herald of the Bauman Moscow State Technical University. Series Natural Sciences;2022-02

3. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review);Applied Solar Energy;2019-09