Properties of the GaSb epitaxial layers obtained by the MOCVD method-Reference-Cited by-同舟云学术

Properties of the GaSb epitaxial layers obtained by the MOCVD method

Published:2006-12 Issue:12 Volume:40 Page:1393-1397
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Levin R. V.,Vlasov A. S.,Zotova N. V.,Matveev B. A.,Pushnyĭ B. V.,Andreev V. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606120049.pdf

Reference13 articles.

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3. V. P. Khovstikov, O. A. Khvostikova, P. Yu. Gazaryan, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 988 (2004) [Semiconductors 38, 950 (2004)].

4. N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 356 (2006) [Semiconductors 40, 351 (2006)].

5. P. S. Dutta, H. L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997).

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