Specific features of dynamic injection and base layer modulation processes in power n +-p-p + diodes-Reference-Cited by-同舟云学术

Specific features of dynamic injection and base layer modulation processes in power n +-p-p + diodes

Published:2007-11 Issue:11 Volume:41 Page:1381-1387
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mnatsakanov T. T.,Levinshtein M. E.,Tandoev A. G.,Yurkov S. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607110206.pdf

Reference25 articles.

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3. A. V. Gorbatyuk, I. V. Grekhov, S. V. Korotkov, et al., Pis’ma Zh. Tekh. Fiz. 8, 685 (1982) [Sov. Tech. Phys. Lett. 8, 298 (1982)].

4. V. M. Tuchkevich and I. V. Grekhov, New Principles of Commutation of High Power Levels by Semiconductor Devices (Nauka, Leningrad, 1988) [in Russian].

5. S. N. Vainshtein, V. S. Yuferev, and J. T. Kostamovaara, Solid-State Electron. 47, 1255 (2003).

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