Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate-Reference-Cited by-同舟云学术

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

Published:2009-08 Issue:8 Volume:43 Page:1102-1109
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Moiseev K. D.,Parkhomenko Ya. A.,Gushchina E. V.,Ankudinov A. V.,Mikhailova V. P.,Bert N. A.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609080259.pdf

Reference15 articles.

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2. V. Grundmann, Physica E 5, 167 (2000).

3. A. N. Imenkov, N. M. Kolchanova, P. Kubat, K. D. Moiseev, S. Tsivish, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 35, 375 (2001) [Semiconductors 35, 360 (2001)].

4. M. Mikhailova, N. Stoyanov, I. Andreev, B. Zhurtanov, S. Kizhaev, E. Kunitsyna, K. Salikhov, and Yu. Yakovlev, Proc. SPIE 6585, 658526 (2007).

5. V. Tasco, N. Deguffroy, A. N. Baranov, E. Tournie, B. Satpari, A. Trampert, M. Dunaevski, and A. Titkov, J. Cryst. Growth 301, 713 (2007).

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