Study of the layer-substrate interface in nc-Si-SiO2-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage-Reference-Cited by-同舟云学术

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Study of the layer-substrate interface in nc-Si-SiO2-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage

Published:2010-09 Issue:9 Volume:44 Page:1187-1191
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Venger E. F.,Kirillova S. I.,Korsunska N. E.,Stara T. R.,Khomenkova L. Yu.,Sachenko A. V.,Goldstein Y.,Savir E.,Jedrzejewski J.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610090150.pdf

Reference26 articles.

1. Li-ping You, C. L. Heng, S. Y. Ma, Z. C. Ma, W. H. Zong, Zheng-Iong Wu, and G. G. Qin, J. Cryst. Growth 212,109 (2000).

2. S. Charvet, R. Madelon, and R. Rizk, Solid State Electron. 45, 1505 (2001).

3. T. Baron, F. Martin, P. Mur, C. Wyon, M. Dupuy, C. Busseret, A. Souifi, and G. Guillot, Appl. Surf. Sci. 164, 29 (2000).

4. D. H. Pearson and A. S. Edelstein, Nanostruct. Mater. 11, 1111 (1999).

5. H. Seifarth, R. Grotzchel, A. Markwitz, W. Matz, P. Nitzsche, and L. Rebohle, Thin Solid Films 330, 202 (1998).

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