Electron paramagnetic resonance of scandium in silicon carbide-Reference-Cited by-同舟云学术

Electron paramagnetic resonance of scandium in silicon carbide

Published:1997-01 Issue:1 Volume:39 Page:44-48
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Baranov P. G.,Il’in I. V.,Mokhov E. N.,Roenkov A. D.,Khramtsov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1130124.pdf

Reference22 articles.

1. Kh. Vakhmer and Yu. M. Tairov, Fiz. Tverd. Tela (Leningrad) 11, 2400 (1969) [Sov. Phys. Solid State 11, 1944 (1969)].

2. G. A. Lomakina, V. I. Sokolov, and Yu. A. Vodakov, Fiz. Tekh. Poluprovodn. 16, 1244 (1982) [Sov. Phys. Semicond. 16, 795 (1982)].

3. V. S. Ballandovich, Fiz. Tekh. Poluprovodn. 25, 287 (1991) [Sov. Phys. Semicond. 25, 174 (1991)].

4. Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, V. G. Oding, V. V. Semenov, and V. I. Sokolov, in Problems in the Physics and Technology of Wide-Gap Semiconductors [in Russian], Leningrad (1979), p. 164.

5. P. G. Baranov, N. G. Romanov, V. A. Vetrov, and V. G. Oding, in Proceedings of the 20th International Conference on the Physics of Semiconductors, Vol. 3, E. M. Anastasskis and J. D. Joannopoulos (Eds.), World Scientific, Singapore (1990), p. 1855.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plastic deformation-induced improved mechanical and thermal properties in hot-forged SiC-TiC composite;Journal of the European Ceramic Society;2021-01

2. State-of-Art: High-Frequency EPR, ESE, ENDOR and ODMR in Wide-Band-Gap Semiconductors;Magnetic Resonance of Semiconductors and Their Nanostructures;2017

3. Paramagnetic oxide traps in Sc2O3-passivated (100)Ge/HfO2 stacks;MICROELECTRON ENG;2015

4. Paramagnetic oxide traps in Sc2O3-passivated (100)Ge/HfO2 stacks;Microelectronic Engineering;2015-11

5. Fundamental Aspects of SiC;Materials Science and Technology;2013-02-15