Tunneling radiative recombination in p-n heterostructures based on gallium nitride and other AIIIBV semiconductor compounds-Reference-Cited by-同舟云学术

Tunneling radiative recombination in p-n heterostructures based on gallium nitride and other AIIIBV semiconductor compounds

Published:2003-11 Issue:5 Volume:97 Page:1015-1019
ISSN:1063-7761
Container-title:Journal of Experimental and Theoretical Physics
language:en
Short-container-title:J. Exp. Theor. Phys.

Author:

Kudryashov V. E.,Yunovich A. É.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1134/1.1633958.pdf

Reference17 articles.

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4. K. G. Zolina, V. E. Kudryashov, A. N. Turkin, and A. É. Yunovich, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1055 (1997) [Semiconductors 31, 901 (1997)].

5. V. E. Kudryashov, K. G. Zolina, A. N. Kovalev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1304 (1997) [Semiconductors 31, 1123 (1997)].

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