Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm-Reference-Cited by-同舟云学术

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Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

Published:1997-10 Issue:10 Volume:42 Page:1239-1240
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Gorlin G. B.,Tulanov V. T.,Siyabekov Kh. B.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1258810.pdf

Reference7 articles.

1. N. Sclar, Infrared Phys. 16, 435 (1976).

2. V. S. Vavilov, I. P. Kekelidze, and L. S. Smirnov, Effect of Radiation on Semiconductors [in Russian], Nauka, Moscow, 1988.

3. N. S. Zhdanovich and Yu. I. Kozlov, Fiz. Tekh. Poluprovodn. 10, 1846 (1976) [Sov. Phys. Semicond. 10, 1102 (1976)].

4. S. D. Brotherton, M. J. King, and G. J. Parker, J. Appl. Phys. 52, 4649 (1981).

5. D. L. Camphausen, H. M. Jams, and R. J. Sladek, Phys. Rev. 132, 1899 (1970).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation;Semiconductors;2001-08

2. Photoconductivity of sulfur-doped silicon near 10.6 µm;Semiconductors;1997-12

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