1. K. Yamamoto, K. Yoshikawa, W. Yoshida, T. Irie, H. Kawasaki, K. Konishi, T. Asatani, M. Kanematsu, R. Mishima, K. Nakano, H. Uzu, and D. Adachi, in Proceedings of the 27th International Conference on Amorphous and Nanocrystalline Semiconductors (Program Book, Seoul, Korea, 2017), p. 92.
2. V. A. Milichko, A. S. Shalin, I. S. Mukhin, A. E. Kovrov, A. A. Krasilin, A. V. Vinogradov, P. A. Belov, and K. R. Simovski, Phys. Usp. 59, 727 (2016).
3. A. V. Sachenko, A. I. Shkrebtii, R. M. Korkishko, V. P. Kostylev, N. R. Kulish, and I. O. Sokolovskyi, Semiconductors 49, 264 (2015).
4. I. E. Panaiotti and E. I. Terukov, Tech. Phys. Lett. 45, 193 (2019).
5. P. A. Forsh, D. M. Zhigunov, A.V. Bobyl’, E.I. Terukov, and P. K. Kashkarov, in Proceedings of the 10th International Conference on Amorphous and Microcrystalline Semiconductors (FTI im. A.F. Ioffe RAN, St. Petersburg, 2016), p. 209.