Electrophysical properties of GaAs layers and the characteristics of fast particle GaAs detectors-Reference-Cited by-同舟云学术

Electrophysical properties of GaAs layers and the characteristics of fast particle GaAs detectors

Published:2004-03 Issue:3 Volume:49 Page:310-317
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Bespalov V. A.,Vorontsov A. V.,Gorbatsevich A. A.,Egorkin V. I.,Zhigal’skii G. P.,Il’ichev É. A.,Kulakov A. V.,Nalbandov B. G.,Pantuev V. S.,Rasputnyi V. N.,Sveshnikov Yu. N.,Shmelev S. S.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1688416.pdf

Reference20 articles.

1. Yu. K. Akimov, O. V. Ignat’ev, A. I. Kalinin, and V. F. Kushniruk, Semiconductor Detectors in Experimental Physics (Énergoatomizdat, Moscow, 1989).

2. EG&G Ortec Catalogue: Instruments and Systems for Nuclear Spectroscopy. Modular Pulse-Processing Electronics and Semiconductor Radiation Detectors (ORTEC, Berthold, 1995), pp. 408–409.

3. S. Arbari, W. Braunschweig, Z. Chu, et al., in Proceedings of the 3rd International Scientific-Technological Conference on Actual Problems of Electronic Instrument Engineering, Nosib, 1996, Vol. 1, p. 1.

4. V. N. Brudnyi, A. I. Potapov, and O. P. Tolbanov, Élektron. Prom., No. 2/3, 29 (2002).

5. G. I. Aizenshtat, V. P. Germogenov, S. M. Gushchin, et al., in Proceedings of the 8th Russian Conference on Gallium Arsenide and III-V Semiconductor Compounds, 2002, pp. 278–280.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selection of elements of the detector unit of the system for measuring the coordinates of gamma radiation sources;50;2021-06-29

2. GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120°C;Technical Physics Letters;2018-10

3. Excess noise and deep levels in GaAs detectors of nuclear particles and ionizing radiation;Journal of Communications Technology and Electronics;2015-06

4. Fast neutron detector based on surface-barrier VPE GaAs structures;Journal of Instrumentation;2015-01-20

5. Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses;Semiconductors;2009-12