The effect of internal electric field on the high-temperature diffusion of arsenic in variable-gap epitaxial CdHgTe layers-Reference-Cited by-同舟云学术

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The effect of internal electric field on the high-temperature diffusion of arsenic in variable-gap epitaxial CdHgTe layers

Published:2004-11 Issue:11 Volume:30 Page:970-972
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Vlasov A. P.,Monastyrskii L. S.,Sokolovskii B. S.,Il’chuk G. A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1829359.pdf

Reference13 articles.

1. Zh. I. Alferov, Usp. Fiz. Nauk 172, 1072 (2002).

2. H. Kroemer, RCA Rev. 18, 332 (1957).

3. T. D. Dzhafarov, Phys. Status Solidi A 42, 11 (1977).

4. T. D. Dzhafarov, Defects and Diffusion in Epitaxial Structures (Nauka, Leningrad, 1978) [in Russian].

5. B. S. Sokolovskii, Ukr. Fiz. Zh. 39, 327 (1994).

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