Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter-Reference-Cited by-同舟云学术

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Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter

Published:2009-09 Issue:5 Volume:38 Page:339-344
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Rudakov V. I.,Kurenya A. L.,Shornikov A. A.,Gitlin M. L.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739709050072.pdf

Reference9 articles.

1. Alchalabi, K., Zimin, D., and Zogg, H., Electron Dev. Lett., 2001, vol. 22, p. 110.

2. Gladkii, S.V., Rudakov, V.I., Saunin, I.V., and Sergeeva, Ya.V., Neorg. Mater., 1993, vol. 29, no. 3, p. 333.

3. Aleksandrova, O.A., Akhmedzhanov, A.T., Bondokov, R.Ts., et al., Fiz. Tekhn. Poluprovodn., 2000, vol. 34,issue 12, p. 1420 [Semiconductors (Engl. Transl.), 2000, vol. 34, issue 12, p. 1365].

4. Zogg, H., Fach, A., John, J. et al., Opt. Eng., 1995, vol. 34, p. 1964.

5. Dolgopolova, E.A., Samoilov, A.M., Sharov, M.K., and Synorov, Yu.V., Kondens. Sredy Mezhfazn. Granithy., 2000, vol. 1, no. 4, p. 297.

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