Investigation of the possibility to develop radiation-hardness LSIs for navigational purposes according to the 0.35-μm domestic CMOS SOI technology-Reference-Cited by-同舟云学术

Investigation of the possibility to develop radiation-hardness LSIs for navigational purposes according to the 0.35-μm domestic CMOS SOI technology

Published:2012-07 Issue:4 Volume:41 Page:266-277
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Elesin V. V.,Nazarova G. N.,Chukov G. V.,Kabal’nov Yu. A.,Titarenko A. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739712040063.pdf

Reference18 articles.

1. Chumakov, A.I., Deistvie kosmicheskoi radiatsii na integral’nye skhemy (Effect of Space Radiation on the Integrated Circuits), Moscow: Radio i svyaz’, 2004.

2. Elesin, V.V., Integrated Microcircuits of the Microwave Range for the Measuring-Information Systems, Datchiki Sist., 2010, no. 3 (130), pp. 61–65.

3. Elesin, V.V., Kuznetsov, A.G., Chukov, G.V., et al., Characteristics of Radiation Hardness of Domestic Radio-Frequency SOI ICs for Navigation Systems, in Radiatsionnaya stoikost’ elektronnykh system-“Stoikost’-2010”: Doklad na Rossiiskoi nauchnoi konferentsii (Radiation Hardness of Electronic Systems-Stoikost’-2010: Report at the Russian Scientific Conference), Moscow: SPELS-NIIP, 2010.

4. Shahidi, G., SOI Technology for the GHz Era, IBM J. Res. Develop., 2002, vol. 46, nos. 2/3, pp. 121–132.

5. Description of the SOI Production Process, http://www.psemi.com/content/ultracmos/ultracmos-process-tech.html

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